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High isolation and low insertion loss switch IC using GaAs MESFET's

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5 Author(s)
Ota, Yorito ; Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan ; Sakakura, M. ; Fujimoro, K. ; Yamamoto, Shinji
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A novel RF switch IC using GaAs MESFET's has been developed for digital communication systems. The new IC is composed of a three-stage SPST switch and a thin film termination resistor, which realizes a high isolation and a low return loss. In addition, a high power handling capability and a low insertion loss are simultaneously realized with two kinds of pinch-off voltages using the orientation effect of GaAs MESFET's. According to these technologies, the excellent performance is achieved as follows: the isolation of 60 dB, the return loss of 20 dB, the 1 dB power compression of 27 dBm and the insertion loss of 1.6 dB at a frequency of 1.9 GHz with control voltages of 0/-5 V. The new switch IC contributes to a variety of communication system using high-quality digital modulation

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:43 ,  Issue: 9 )

Date of Publication:

Sep 1995

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