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Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETs

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5 Author(s)
W. Stillman ; ECSE Dept., Rensselaer Polytech. Inst., NY ; M. S. Shur ; D. Veksler ; S. Rumyantsev
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Results of room temperature measurement of nonresonant sub-terahertz detection by nanoscale silicon MOSFETs under a variety of load conditions are reported. The effect of device loading is incorporated into existing response models to explain diminished response in the sub-threshold region, and calculation of noise equivalent power indicates minima near the threshold voltage

Published in:

Electronics Letters  (Volume:43 ,  Issue: 7 )