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A 1.8 GHz Fully Integrated Low Voltage LC VCO in Silicon on Sapphire CMOS

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7 Author(s)
Bhatia, Rahul ; Georgia Institute of Technology, Yamacraw Design Center, 791 Atlantic Drive, Atlanta, GA 30332, USA, ; Jalan, U. ; Chakraborty, S. ; Sang-Woong Yoon
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This paper presents the design, fabrication and measurement of a low voltage VCO operating at 1.8 GHz and fabricated in 0.5¿m Silicon On Sapphire CMOS (SOS-CMOS) process. The VCO operates with supply voltage as low as 1V. The tuning range was measured to be 14% and the measured phase noise was -117.5 dBc/ Hz at an offset frequency of 1 MHz from the 1.77 GHz carrier. The VCO and the buffers consume 14.7 mW power from a 1.5V supply.

Published in:

Microwave Conference, 2003. 33rd European

Date of Conference:

Oct. 2003

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