By Topic

Single Supply, High Linearity, High Efficient PHEMT Power Devices and Amplifier for 2 GHz & 5 GHz WLAN Applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Min Park ; Microwave Device Team, Wireless Communication Devices Department, Basic Research Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea. Phone: +82-42-860-5795, Fax: +82-42-860-6183, E-mail: mpark@etri.re.kr ; Hokyun Ahn ; Dong Min Kang ; Honggu Ji
more authors

A single supply, high linearity, high efficient power devices and amplifier MMIC is implemented utilizing high performance of quasi-enhanced power PHEMT technology. The PHEMT power device features Vth= ¿0.65 V, Vbdg=26 V, Imax=144 mA/mm at Vgs=0.2 V, Gm=340 mS/mm. When matched on-wafer compromise between power and efficiency, the OIP3 at peak IP3 is 40.5 dBm for 2 GHz and 37.0 dBm for 5.8 GHz, respectively. The power amplifier achieves at 5.8 GHz Pout=27 dBm with associated PAE=45% at 5 V under Vgs=0 V, GL=14.5 dB, OIP3=37.5 dBm.

Published in:

Microwave Conference, 2003 33rd European

Date of Conference:

Oct. 2003