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A single supply, high linearity, high efficient power devices and amplifier MMIC is implemented utilizing high performance of quasi-enhanced power PHEMT technology. The PHEMT power device features Vth= Â¿0.65 V, Vbdg=26 V, Imax=144 mA/mm at Vgs=0.2 V, Gm=340 mS/mm. When matched on-wafer compromise between power and efficiency, the OIP3 at peak IP3 is 40.5 dBm for 2 GHz and 37.0 dBm for 5.8 GHz, respectively. The power amplifier achieves at 5.8 GHz Pout=27 dBm with associated PAE=45% at 5 V under Vgs=0 V, GL=14.5 dB, OIP3=37.5 dBm.