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A Sallen and Key Active Filter Using SiGe BiCMOS Technology

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4 Author(s)
Temcamani, F. ; ENSEA-ECIME, 95014 Cergy-Pontoise Cedex, France, Phone: (0033). 1.30.73.62.72 ; Diab, Hilda ; Regis, M. ; Gautier, J.-L.

In this paper, a 1.3 GHz Sallen and Key band pass filter, based on a voltage amplifier and designed with an original topology, is presented. This filter realized with a SiGe BiCMOS technology, showed a good agreement between simulation and measurement. In particular, the amplifier gain and the filter selectivity can be tuned. Q factors of up to 60 were measured.

Published in:

Microwave Conference, 2003. 33rd European

Date of Conference:

Oct. 2003

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