By Topic

A Sallen and Key Active Filter Using SiGe BiCMOS Technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Farid Temcamani ; ENSEA-ECIME, 95014 Cergy-Pontoise Cedex, France, Phone: (0033). 1.30.73.62.72 ; Hilda Diab ; Myrianne Regis ; Jean-Luc Gautier

In this paper, a 1.3 GHz Sallen and Key band pass filter, based on a voltage amplifier and designed with an original topology, is presented. This filter realized with a SiGe BiCMOS technology, showed a good agreement between simulation and measurement. In particular, the amplifier gain and the filter selectivity can be tuned. Q factors of up to 60 were measured.

Published in:

Microwave Conference, 2003 33rd European

Date of Conference:

Oct. 2003