By Topic

Performance Assessment of Subpercolating Nanobundle Network Thin-Film Transistors by an Analytical Model

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Pimparkar, N. ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN ; Guo, Jing ; Alam, M.A.

Nanobundle network thin-film transistors (NB-TFTs) have emerged as a viable higher performance alternative to polysilicon and organic transistors with possible applications in macroelectronic displays, chemical/biological sensors, microelectronic high power transistors, and photovoltaics. A simple analytical model for current-voltage (I-V) characteristics of the NB-TFTs (below the global percolation limit) is proposed and validated by numerical simulation and experimental data. The physics-based predictive model provides a simple relation between the transistor characteristics and the design parameters which can be used for optimization of NB-TFTs. The model provides important insights into the recent experiments on the NB-TFT characteristics and electrical purification of the NB networks

Published in:

Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 4 )