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High-Performance 15-V Novel LDMOS Transistor Architecture in a 0.25- μm BiCMOS Process for RF-Power Applications

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10 Author(s)
D. Muller ; STMicroelectron., Crolles ; A. Giry ; F. Judong ; C. Rossato
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The optimization of the small and large signal performances of a radio frequency (RF)-LDMOS is presented via the achievement of a novel LDMOS architecture. Specific process steps are introduced into a 0.25-mum BiCMOS technology and precisely described to realize a fully salicided gate RF-LDMOS architecture. Significant improvement is obtained on the small-signal - fT and Fmax - and power performances while maintaining good dc characteristics

Published in:

IEEE Transactions on Electron Devices  (Volume:54 ,  Issue: 4 )