Cart (Loading....) | Create Account
Close category search window

Nano-CMOS Technology for Next Fifteen Years

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Iwai, H. ; Frontier Collaborative Res. Center, Tokyo Inst. of Technol. ; Hei Wong

Complementary metal-oxide-semiconductor (CMOS) technology has been developed into the sub-100 nm range. It is expected that the nano-CMOS technology will govern the IC manufacturing for at least another couple of decades. Though there are many challenges ahead, further down-sizing the device to a few nanometers is still on the schedule of International Technology Roadmap for Semiconductors (ITRS). Several technological options for manufacturing nano-CMOS microchips are available or will soon be available. This paper reviews the challenges of nano-CMOS downsizing and manufacturing. We shall focus on the recent progresses on the key technologies for the nano-CMOS IC fabrication in the next fifteen years

Published in:

TENCON 2006. 2006 IEEE Region 10 Conference

Date of Conference:

14-17 Nov. 2006

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.