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Extreme ultraviolet source radiated from pinch plasma for semiconductor manufacturing

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4 Author(s)
Zhang, C.H. ; Dept. of Electr. Eng., Harbin Inst. of Technol. ; Katsuki, S. ; Akiyama, H. ; Xu, D.G.

Plasma extreme ultraviolet (EUV) source is regarded as the most promising source of EUV radiation as intensive research is underway over the world. A top priority issue for implementing EUV lithography is to upgrade the EUV power extensively. In the development of Z-pinch plasma EUV source, xenon gas is used for the target. The Z-pinch plasma was driven by pulsed current with an amplitude of 30 kA and pulse duration of 100 ns. Pinhole imaging, EUV spectrograph and an in-band EUV energy monitor were used to characterise the EUV emission from the Z-pinch discharge plasma. In order to improve the conversion efficiency (CE) from input electric energy to EUV radiation, a solid tin rod was also used as target material. The experimental analyses have demonstrated that the CE was as high as 1.5%

Published in:

Micro & Nano Letters, IET  (Volume:1 ,  Issue: 2 )