By Topic

A low dielectric film obtained by polymerization of Tetramethyldisiloxane using a Remote Plasma Enhanced Chemical Vapor Deposition (RPECVD) process.

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Vestiel, E. ; IEMN UMR CNRS 8520, USTL -Cité Scientifique, Avenue Poincaré BP69,59652 Villeneuve d'' Ascq Cedex. E-mail: vestiel@orchidee.iemn.univ-lillel.fr ; Vindevoghel, J. ; Glay, D. ; Jama, C.
more authors

Cold Remote Nitrogen Plasma (CRNP) process is used to synthesise dielectric f ilns from 1,1,3,3 TetraMethylDSiloxane (TMDS) with low permittivity. These films are deposited on Gallium Arsenide and Aluminum. Dielectric characterizations are realized at 1OGHz using two different methods to evaluate the relative dielectric constant (¿ ¿) and the losses (¿ ¿) of deposited films. Films with a thickness in the range of (1 - 75 m m) are quickly deposited with a deposition rate that could achieves 460 Å/s on Aluminum substrate. This simple process is quite promising for interconnects or antenna applications, because it provides ¿ ¿ value of 3.89 and ¿ ¿ value of 0.09 at 1OGHz.

Published in:

Microwave Conference, 2000. 30th European

Date of Conference:

Oct. 2000