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Global simulation of a packaged Gunn oscillator

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3 Author(s)
Stopponi, G. ; DIEI, Università di Perugia, Perugia, Italy, e-mail: ; Roselli, L. ; Ciampolini, P.

In this paper, a global simulation scheme is presented, which includes the self-consistent, distributed solution of Maxwell's equations and semiconductor charge transport equations over a three-dimensional domain, and is therefore capable of accurately describing the propagation of electro-magnetic field within active semiconductor devices. Strategies aimed at the reduction of computational costs are briefly illustrated as well. In order to demonstrate some of the code features, the simulation of a simple oscillator circuit (exploiting a GaAs Gunn device) is discussed, making it evident the influence of the enclosing package on the oscillator's operating mode.

Published in:

Microwave Conference, 2000. 30th European

Date of Conference:

Oct. 2000