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Microwave Absorptive MEMS Switches

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2 Author(s)
Tan, Guan-Leng ; The Radiation Laboratory, EECS Department, The University of Michigan, 1301 Beal Ave., Ann Arbor, MI 48109-2122, USA. Phone: +1-734-936-0183 Fax: +1-734-647-2106, ; Rebeiz, G.M.

This paper describes the design and performance of a 30 GHz CPW SPST absorptive MEMS switch based on silicon surface micromachining technology. The MEMS switch is implemented using capacitive shunt bridges with fixed-fixed beams. A return loss of better than 15 dB and an insertion loss of 0.8-1.0 dB is achieved in the up-state position. The return loss is better than 20 dB and the isolation is 25-30 dB at 30 GHz in the down-state position. Potential application areas include switch matrix communication systems.

Published in:

Microwave Conference, 2000. 30th European

Date of Conference:

Oct. 2000