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This paper describes the design and performance of a 30 GHz CPW SPST absorptive MEMS switch based on silicon surface micromachining technology. The MEMS switch is implemented using capacitive shunt bridges with fixed-fixed beams. A return loss of better than 15 dB and an insertion loss of 0.8-1.0 dB is achieved in the up-state position. The return loss is better than 20 dB and the isolation is 25-30 dB at 30 GHz in the down-state position. Potential application areas include switch matrix communication systems.