By Topic

Fully-Depleted 0.25 Micron Silicon-on-Insulator MOSFET Transistors for Microwave Applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Vanhoenacker-Janvier, D. ; Microwave Laboratory, Université catholique de Louvain, Bâtiment Maxwell, place du Levant, 3 B-1348 Louvain-la-Neuve, Belgium. vanhoenacker@emic.ucl.ac.be ; Gillon, R. ; Raynaud, C. ; Martin, F.

Thin film fully-depleted Silicon-on-Insulator (SOI) CMOS technology can achieve a maximum oscillation frequency fmax of 50 GHz for 1V supply voltage, when TiSi2 is used on the gate. This kind of performances and the advantages of the SOI transistors fit the needs for low-voltage low-power microwave applications. The accurate extraction of the small signal equivalent circuit of those transistors is necessary for their optimisation and the design of future microwave circuits.

Published in:

Microwave Conference, 1999. 29th European  (Volume:2 )

Date of Conference:

Oct. 1999