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2~3 GHz Silicon MMIC Balanced Oscillators using On-Chip Active Resonators

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4 Author(s)
Sun, Y. ; Delft Institute of Microelectronics and Submicrontechnology (DIMES), Delft University of Technology, Feldmannweg 17, 2600 GB Delft, The Netherlands ; de Kok, M. ; Tauritz, J.L. ; Baets, R.G.F.

This paper describes the design and measurement of novel silicon MMIC balanced oscillators using active resonators which have proven superior to on-chip passive resonators. This is the first demonstration of a silicon MMIC balanced oscillator of this type. The active resonators contain active inductors with inductances of 4.8 nH and 3.6 nH at frequencies of 2.14 GHz and 3.02 GHz, respectively. Based on these resonators two oscillators were designed. The oscillators are relatively compact occupying an area of 0.9×1.0 mm2 as implemented in the DIMES-03 silicon bipolar process (fT=15 GHz). Good agreement between simulation and measurement for active inductors, resonators and oscillators was obtained. Output power levels of >¿12 dBm and phase noise of ¿95~¿100 dBc/Hz at 1 MHz offset frequency were achieved.

Published in:

Microwave Conference, 1997. 27th European  (Volume:2 )

Date of Conference:

8-12 Sept. 1997