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The Determination of On-Wafer Noise Parameters at W-Band

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3 Author(s)
Alam, Tariq A. ; Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, The University of Leeds, Leeds LS2 9JT, UK. TEL: +44 113 233 2094 FAX: +44113 233 2032, E-Mail: eentam@sun.leeds.ac.uk ; Pollard, Roger D. ; Snowden, Christopher M.

A new procedure for determining the noise parameters of on-wafer devices at W-band is presented. In this procedure the noise parameters of the device (DUT) are de-embedded using correlation matrices. The first reported noise parameter results for an on-wafer attenuator at 94GHz are also presented. These measured noise parameters show good agreement to those calculated from the DUT's scattering parameters.

Published in:

Microwave Conference, 1997. 27th European  (Volume:2 )

Date of Conference:

8-12 Sept. 1997