Scheduled System Maintenance:
On Monday, April 27th, IEEE Xplore will undergo scheduled maintenance from 1:00 PM - 3:00 PM ET (17:00 - 19:00 UTC). No interruption in service is anticipated.
By Topic

Low Frequency Noise Properties of Microwave Transistors and their Application to Circuit Design

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Graffeuil, J. ; LAAS-CNRS and Université P. Sabatier de Toulouse, 7 av. Colonel Roche, 31077 Toulouse Cedex FRANCE ; Plana, R.

A knowledge of low frequency (L.F) noise in FET's, HBT's and others related devices is essential in designing oscillators, multipliers, mixers and broadband amplifiers. Physical origins and assessment techniques ofthis noise are addressed A lot of L.F noise measurements on commercial and research devices either performed in our laboratory or picked up from literature are presented and are intended to give the state of the art of today available performance. Finally design rules for reducing the impact of L.F noise on microwave circuits are suggested.

Published in:

Microwave Conference, 1994. 24th European  (Volume:1 )

Date of Conference:

5-9 Sept. 1994