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Fast Thin-Film Transistor Circuits Based on Amorphous Oxide Semiconductor

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10 Author(s)
Masato Ofuji ; Canon Res. Center, Canon, Inc, Tokyo ; Katsumi Abe ; Hisae Shimizu ; Nobuyuki Kaji
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Five-stage ring oscillators (ROs) composed of amorphous In/Ga/Zn/O (a-IGZO) channel thin-film transistors (TFTs) with the channel lengths of 10 mum were fabricated on a glass substrate. The a-IGZO layer was deposited by RF magnetron sputtering onto the unheated substrate. The RO operated at 410 kHz (the propagation delay of 0.24 mus/stage), when supplied with an external voltage of +18 V. This is the fastest integrated circuit based on oxide-semiconductor channel TFTs to date that operates faster than the ROs using conventional hydrogenated amorphous silicon TFTs and organic TFTs

Published in:

IEEE Electron Device Letters  (Volume:28 ,  Issue: 4 )