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Correction to "Revision of Tunneling Field-Effect Transistor in Standard CMOS Technologies"

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4 Author(s)

Previously published results by the authors, from 2004 to 2006, on the tunneling field-effect transistor (TFET) are revised in this correction. The devices that they had characterized as TFETs contain a conducting path in parallel to the intended tunneling junction. Therefore, the measured characteristics are similar to a MOSFET with a resistive source connection

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 4 )