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A Graphene Field-Effect Device

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4 Author(s)
Lemme, Max C. ; Adv. Microelectron. Center Aachen ; Echtermeyer, T.J. ; Baus, M. ; Kurz, H.

In this letter, a top-gated field-effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from the top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 4 )