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Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/ HfO2 Gate Stack

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11 Author(s)

The low-frequency noise of pMOSFETs fabricated in epitaxial germanium-on-silicon substrates is studied. The gate stack consists of a TiN/TaN metal gate on top of a 1.3-nm equivalent oxide thickness HfO2/SiO2 gate dielectric bilayer. The latter is grown by chemical oxidation of a thin epitaxial silicon film deposited to passivate the germanium surface. It is shown that the spectrum is of the 1/fgamma type, which obeys number fluctuations for intermediate gate voltage overdrives. A correlation between the low-field mobility and the oxide trap density derived from the 1/f noise magnitude and the interface trap density obtained from charge pumping is reported and explained by considering remote Coulomb scattering

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 4 )

Date of Publication:

April 2007

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