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Electron Transport in Strained-Silicon Directly on Insulator Ultrathin-Body n-MOSFETs With Body Thickness Ranging From 2 to 25 nm

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3 Author(s)
Leonardo Gomez ; Microsystems Technol. Lab., MIT, Cambridge, MA ; I. Aberg ; J. L. Hoyt

The electron effective mobility in ultrathin-body n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-free 30% strained-Si directly on insulator (SSDOI) is mapped as the body thickness is scaled. Effective mobility and device body thickness were extracted using current-voltage and gate-to-channel capacitance-voltage measurements as well as cross-sectional transmission electron microscopy. Devices with body thicknesses ranging from 2 to 25 nm are studied. Significant mobility enhancements ( ~1.8x) compared to unstrained SOI are observed for 30% SSDOI with body thicknesses of above 3.5 nm. The mobility exhibits a sharp drop as the body thickness is scaled below 3.5 nm

Published in:

IEEE Electron Device Letters  (Volume:28 ,  Issue: 4 )