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AlGaN Photodetectors Prepared on Si Substrates

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3 Author(s)
Chiou, Y.Z. ; Dept. of Electron. Eng., Southern Taiwan Univ., Tainan ; Lin, Y.C. ; Wang, C.K.

AlGaN ultraviolet (UV) metal-semiconductor-metal (MSM) photodetectors (PDs) grown on silicon substrates were fabricated and characterized. With 5-V applied bias, it was found that dark current density of Al0.2Ga0.7N PDs on silicon substrate was only 7.5times10-9 A/cm2. With an applied bias of 7 V, it was found that peak responsivities were 0.09 and 0.11 A/W while UV/visible rejection ratios (i.e., peak wavelength: 420 nm) were 324 and 278 for Al0.2Ga0.8N and Al0.3 Ga0.7N MSM PDs, respectively. Moreover, the noise equivalent power of Al0.2Ga0.8N MSM PDs was estimated to be 3.5times10-12 W

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 4 )

Date of Publication:

April 2007

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