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An On-Board 50 GHz Band Low-Noise Amplifier for Millimeter Wave Personal Satellite Communications

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7 Author(s)
Masafumi Shigaki ; Space Communications Research Corporation, 5F, Hayakawa Tonakai Bldg. 2-12-5, Iwamoto-cho, Chiyoda-ku, Tokyo 101, Japan ; Satoru Sugawara ; Tetsuo Yamamoto ; Yoshihiro Kawasaki
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An onboard 50 GHz band low-noise amplifier for millimeter wave personal satellite communications is developed. A 100-¿ m-wide and 0.25-¿ m-long gate HEMT is developed. An accurate S parameter of a device with bonding wire is successfully measured up to 40 GHz using MMIC technology. The characteristics of this amplifier are a 20 dB gain, 4.2 dB noise figure, and 20 dB input return loss over a 50.4 GHz to 51.4 GHz communication bandwidth at room temperature. At +60°C and ¿40°C, the maximum noise figures are 4.4 dB and 2.8 dB, respectively. There are no problems for the temperature cycle and modal survey test.

Published in:

Microwave Conference, 1991. 21st European  (Volume:1 )

Date of Conference:

9-12 Sept. 1991