Referenced Items are not available for this document.
A new method for the derivation of a FET-equivalent-circuit for large- and small-signal applications is presented. The model consists of nine bias-dependent intrinsic elements additionally eight linear extrinsic elements. All circuit-elements are determined from measured DC- and scattering-parameters with an analytical method at any bias-condition. The nonlinear behaviour of the intrinsic elements are expressed using two-dimensional spline-functions. The large-signal simulation considers all nonlinear intrinsic elements including the Schottky-diodes and the gate-drain avalanche breakdown.
Published in:
Microwave Conference, 1990. 20th European
(Volume:1
)
Date of Conference: 9-13 Sept. 1990
- Page(s):
- 784 - 789
- Conference Location :
- Budapest, Hungary
- Digital Object Identifier :
- 10.1109/EUMA.1990.336139
- Product Type:
- Conference Publications
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