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Modification of photoluminescence and charge in oxide with silicon nanocrystals by high energy ion implantation

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8 Author(s)
Antonova, I.V. ; Inst. of Semicond. Phys., Novosibirsk ; Gulyaev, M.B. ; Skuratov, V.A. ; Marin, D.V.
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The samples with layer of silicon nanocrystals ncSi embedded in SiO2 (the excess Si content in oxide ranged from 5 to 92%) were subjected to high energy ion implantation. Implantation-induced modification of SiO2-ncSi properties discussed in the report includes a shift of the ncSi-related photoluminescence peak and change in charge value trapped on the nanocrystals.

Published in:

Electronics and Photonics, 2006. MEP 2006. Multiconference on

Date of Conference:

7-10 Nov. 2006

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