By Topic

Measurement of Field Emission Property on the Individual Silicon Nanowire by Scanning Tunneling Microscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Ming, W.W. ; Sch. of Phys. & Eng., Sun Yat-sen Univ., Guangzhou ; Chen, Jian ; She, J.C. ; Zhou, J.
more authors

Silicon nanowires (SiNWs) array are expected to be a promising cathode in field emission devices. We report field emission (FE) characteristic on individual SiNW apex by using scanning tunneling microscopy (STM) operated in field emission mode at room temperature in ultrahigh vacuum condition. The result revealed the SiNWS has good emission characteristic. In addition, we verified the FN theory was also applicable in micro-scale field emission process through numerical value simulation of the field emission process

Published in:

Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International

Date of Conference:

July 2006