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Transition from Fowler-Nordheim to Child-Langmuir Law in the quantum regime

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2 Author(s)
W. S. Koh ; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798; Institute of High Performance Computing, Singapore 117528 ; L. K. Ang

A detailed quantum mechanical analysis of the current-voltage characteristics of a 1D planar nanodiode showing the transition from Fowler-Nordheim to quantum Child-Langmuir (CL) law in high current regime is presented. Results reveal that at 1000 nm gap spacing (D), the transition follows the classical CL law that the saturation limit at high electric field approaches the normalized self-consistent field emission current density. The influence of different cathode materials with different work functions and temperature is presented

Published in:

Vacuum Nanoelectronics Conference, 2006 and the 2006 50th International Field Emission Symposium., IVNC/IFES 2006. Technical Digest. 19th International

Date of Conference:

July 2006