By Topic

Analysis on the Effects of MOSFET Threshold Voltage Mismatch in CMOS Operational Amplifiers for RF Applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Ab-Rahman, A.A.H. ; Dept. of Microelectron. & Comput. Eng., Universiti Teknologi Malaysia, Johor ; Kamisian, I.

CMOS operational amplifiers (op amps) are used in RF circuit blocks as low noise or power amplifiers. One of the critical issues in the performance and operation of these op amps is its threshold voltage (Vth) mismatch between adjacent MOSFET devices. Different Vth values between the op amps' input MOSFETs of the differential stage causes it to deviate in its output specification, which include among others, the AC and DC gain, bandwidth, and most notably, the offset voltage. First order analysis of offset voltage approximation is performed with 30% Vth variation, and the obtained result is verified through a BSIM3 MOSFET model, with parametric sweep SPICE simulation of a 2-stage large gain and bandwidth op amp. The study is found to be crucial in order to develop a technique that could detect Vth variation of transistors, and compensate op amps output specifications accordingly

Published in:

RF and Microwave Conference, 2006. RFM 2006. International

Date of Conference:

12-14 Sept. 2006