By Topic

Formation of sharp-apex pyramids for active tips used in scanning probe microscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
J. Soltys ; Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia. e-mail: jan.soltys@savba.sk ; D. Gregusova ; R. Kudela ; A. Satka
more authors

This work is a part of a deeper study into technologies developed for the so-called active tips for use in scanning probe microscopy. This paper show that using an AlAs facet-forming sacrificial layer and a H 3PO4, H2O2, H2O based solution, symmetric pyramidal structures with tip diameter below 35 nm can be prepared. Such pyramidal objects was used for further MOCVD overgrowth. Finally, the quality of the mesa sidewalls obtained was controlled using the SEM and AFM. The pyramids are suitable for the next processing, and various semiconductor devices can be prepared on the pyramid

Published in:

2006 International Conference on Advanced Semiconductor Devices and Microsystems

Date of Conference:

Oct. 2006