By Topic

Nickel ohmic contact on silicon carbide

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)

We obtained ohmic contact structure with the best contact resistivity of 4.06times10-4 Omega cm2 and with excellent thermal stability - the metallization was stable after being tested for 10 hours at 900 degC. The as deposited structure contains oxygen and carbon. Make allowance for the composition of the species in the structure after annealing Ni and Si create Ni2Si silicides. The reaction release carbon so the structure contains large quantity of vacant carbon

Published in:

Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on

Date of Conference:

Oct. 2006