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Structural, optical and electrical properties of nanocrystalline TiO2 -- HfO2 thin films

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2 Author(s)
Domaradzki, J. ; Fac. of Microsystem Electron. & Photonics, Wroclaw Univ. of Technol. ; Kaczmarek, D.

In the present work the properties of mixed HfxTi1-xO2 solid solution thin films in metal-oxide-semiconductor (MOS) configuration have been studied. Thin films, were grown on monocrystalline silicon substrates using the low pressure hot target reactive sputtering from the Ti:Hf mosaic target. From optical transmission measurements the 3.42 (eV) bandgap of the thin films has been estimated. Electrical characterization of the prepared MOS structures shows classical capacitance- and current-voltage behaviors indicating medium-k gate oxide properties with the low leakage current

Published in:

Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on

Date of Conference:

16-18 Oct. 2006

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