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RF plasma deposition of thin amorphous silicon carbide films using a combination of silan and methane

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5 Author(s)
Huran, J. ; Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava ; Hotovy, I. ; Pezoltd, J. ; Balalykin, N.I.
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A capacitive coupled plasma reactor was used for PECVD technology, where both silan and methane were introduced into the plasma reactor through the shower head. The concentration of species in the SiC films was determined by RBS and ERD. Chemical compositions were analyzed by IR spectroscopy. Film morphology was assessed by AFM. The RBS results showed the main concentrations of Si and C in the films. The concentration of hydrogen was approximately 20 at %. The films contain a small amount of oxygen and nitrogen. IR results showed the presence of Si-C, Si-O, Si-N, Si-H, N-H, C-H, C-N specific bonds. The AFM micrographs revealed the film surface smooth and compact

Published in:

Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on

Date of Conference:

Oct. 2006