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Preparation of p-type ZnO thin films by RF diode sputtering

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6 Author(s)
Shtereva, K. ; Dept. of Electron., Rousse Univ. ; Novotny, I. ; Tvarozek, V. ; Srnanek, R.
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A p-type ZnO thin film was prepared by RF diode sputtering and nitrogen doping. Deposition in plasma N2 gas source increases the N solubility and thus the incorporation of No acceptor that is responsible for p-type conductivity of the ZnO films. Raman analyses performed in back scattering configuration proved the incorporation of the nitrogen acceptor No into ZnO:N. Raman spectra show E2 mode and two nitrogen related local vibrational modes (LVMs) typical for N-doped ZnO. Minimum resistivity of 790 Omegacm, a Hall mobility of 22 cm2V-1s-1 and the carrier concentration of 3.6 times 1014 cm-3were obtained at 75 %N2 in Ar/N2 sputtering gas. X-ray diffraction measurements (XRD) showed that ZnO:N films had the preferential orientation of (002) plane at 25 %N2 and of (100) plane for higher N2 concentrations. The average grain size was from 7 to 42 nm for all Ar/N2 ratios. ZnO:N films exhibit relatively high microstrains (10 times 10-3)

Published in:

Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on

Date of Conference:

Oct. 2006