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Post-metallization H2 annealing of electrically active defects in Ta2O5/nitrided Si stacks

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2 Author(s)
Paskaleva, A. ; Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia ; Atanassova, E.

The effect of H2 post-metallization annealing (PMA) on the electrical behavior of sputtered Ta2O5 layers on nitrogen ion implanted Si is investigated. The high densities of oxide charge interface and slow states typical of as-deposited stacks are strongly reduced by one to two orders of magnitude after annealing. H2 treatment affects both bulk Ta2O5 and interfacial layers but is more efficient in annealing electrically active defects in nitrided layer. The effect of defect annealing on the leakage currents and conduction mechanisms is also discussed

Published in:

Advanced Semiconductor Devices and Microsystems, 2006. ASDAM '06. International Conference on

Date of Conference:

Oct. 2006