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This paper presents the enhanced characteristics of a newly developed low-loss and low-noise 1200-V insulated gate bipolar transistor (IGBT) module. In order to realize low-noise emission, it is necessary not only to improve the reverse recovery characteristics of the free wheeling diode (FWD) but also to reduce the low-current turn-on dIC/dt of the IGBT. The new IGBTs with high turn-on dIC /dt controllability and low turn-on power dissipation have been successfully developed by the reduction of Miller capacitance resulting from an optimization of the surface. The 1200-V 450-A IGBT module utilizing the new IGBT and optimized FWD chips has been able to realize 30% reduction of the switching power dissipation when compared to the conventional IGBT module under the operating condition to set the same noise emission level
Published in:
Industry Applications, IEEE Transactions on
(Volume:43
,
Issue:
2
)
Date of Publication: March-april 2007
- Page(s):
- 513 - 519
- ISSN :
- 0093-9994
- INSPEC Accession Number:
- 9370928
- Digital Object Identifier :
- 10.1109/TIA.2006.890024
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 19 March 2007
- Issue Date :
- March-april 2007
- Sponsored by :
- IEEE Industry Applications Society
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