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High-Speed GaAs 1/8 Dynamic Frequency Divider Stabilized for Supply Voltage Fluctuation and its Phase Noise Characteristics

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4 Author(s)
Shigaki, M. ; FUJITSU LABORATORIES LTD., 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211 Japan ; Saito, T. ; Onodera, H. ; Kurihara, Hirosi

A new GaAs 9.6 GHz 1/8 dynamic frequency divider with 1 ¿m long gate FETs has been developed. This divider is consists of a 1/2 dynamic divider for the first stage, and 1/4 static dividers for subsequent stages. This dynamic divider has a double loop structure using a pair of differential amplifiers for high speed and stable operation with supply voltage fluctuations of ± 0.5 V around -7 V. Since GaAs FETs have a higher 1/f noise than Si transistors, higher phase noise occurs in phase-locked oscillators (PLO) using GaAs frequency dividers. However, no quantitative comparison has been reported. The measured phase noise characteristic of a 6.4 GHz PLO is -92 dBc/Hz at 1 kHz off-carrier frequency and is comparable to that of a Si divider. This satisfies the requirements for most microwave PLOs.

Published in:

Microwave Conference, 1988. 18th European

Date of Conference:

12-15 Sept. 1988