By Topic

New Very High Q Microwave Transistor Oscillators Using Dielectric Resonators

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Khanna, A.P.S. ; Laboratoire d''Electronique des Microondes ERA CNRS N°535 123, rue A. Thomas 87060 LIMOGES Cedex France. ; Obregon, J. ; Guillon, P. ; Garault, Y.

Using the dielectric resonator as the matching as well as the frequency determining element, one port and two port Microwave Transistor oscillators having external quality factors much higher than the unloaded Q of the dielectric resonators, have been presented. A self oscillating mixer has been proposed as the potential application of the two port FET oscillator presented.

Published in:

Microwave Conference, 1981. 11th European

Date of Conference:

7-11 Sept. 1981