By Topic

Large Signal Calculations of Si, GaAs and InP Baritt Diode Performances in X and Q Band

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Vanoverschelde, A. ; CENTRE HYPERFREQUENCES & SEMICONDUCTEURS - L.A. au CNRS n°287 - Bât. P4, Université de LILLE I BP 36 59650 VILLENEUVE D''ASCQ France. ; Salmer, G.

The capabilities of Baritt diodes in the millimeter wave range and the effects of the electron velocity versus field dependence in GaAs and InP are investigated. The influences of doping profile and material parameters are analysed by means of an exact large signal simulation. At millimeter frequencies, the Si Baritt r.f. power remains limited due to the small value of the negative resistance. This resistance is greatly improved by using GaAs or InP N+P N N+ structures; thus, better available power and efficiency can be expected. The InP material is found to be better than GaAs, because the r.f. levels can be higher and the diffusion phenomenon effect is smaller.

Published in:

Microwave Conference, 1978. 8th European

Date of Conference:

4-8 Sept. 1978