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A Direct-Conversion RF Front-End in a 65-nm CMOS

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3 Author(s)
Kaukovuori, J. ; Electron. Circuit Design Lab., Helsinki Univ. of Technol., HUT ; Ryynanen, J. ; Halonen, K.A.I.

A 2.4-GHz direct-conversion RF front-end designed in a 65-nm CMOS process is described in this paper. The front-end includes an LNA, folded quadrature mixers, a local oscillator (LO) divider, and LO buffers. The front-end consumes 29.3 mA from a 1.2-V power supply and according to simulations it achieves 39-dB voltage gain, 1.5-dB minimum spot noise figure, and -17-dBm IIP3

Published in:

Norchip Conference, 2006. 24th

Date of Conference:

Nov. 2006