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Low-frequency noise has been studied on a set of n- and p-channel CMOS transistors fabricated in a 0.13μm technology. Noise measurements have been performed on transistors with different gate lengths operating under wide bias conditions, ranging from weak to strong inversion. Noise origin has been identified for both type of devices, and the oxide trap density Nt, the Hooge parameter αH and the Coulomb scattering parameter αs have been extracted. The experimental results are compared with simulations using the BSIM3v3 MOS model.