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Novel Hybrid Voltage Controlled Ring Oscillators Using Single Electron and MOS Transistors

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4 Author(s)
Wancheng Zhang ; Inst. of Semicond., Chinese Acad. of Sci., Beijing ; Nan-Jian Wu ; Hashizume, Tamotsu ; Kasai, Seiya

This paper proposes two kinds of novel hybrid voltage controlled ring oscillators (VCO) using a single electron transistor (SET) and metal-oxide-semiconductor (MOS) transistor. The novel SET/MOS hybrid VCO circuits possess the merits of both the SET circuit and the MOS circuit. The novel VCO circuits have several advantages: wide frequency tuning range, low power dissipation, and large load capability. We use the SPICE compact macro model to describe the SET and simulate the performances of the SET/MOS hybrid VCO circuits by HSPICE simulator. Simulation results demonstrate that the hybrid circuits can operate well as a VCO at room temperature. The oscillation frequency of the VCO circuits could be as high as 1 GHz, with a -71 dBc/Hz phase noise at 1 MHz offset frequency. The power dissipations are lower than 2 uW. We studied the effect of fabrication tolerance, background charge, and operating temperature on the performances of the circuits

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Nanotechnology, IEEE Transactions on  (Volume:6 ,  Issue: 2 )