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3-D Design and Analysis of Functional NEMS-gate MOSFETs and SETs

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3 Author(s)
Pruvost, B. ; Quantum Nanoelectronics Res. Center, Tokyo Inst. of Technol. ; Mizuta, H. ; Oda, S.

Nanoelectromechanical system (NEMS)-gate metal- oxide-semiconductor field effect transistor (MOSFET) and single- electron transistor (SET) structures are investigated by combining 3-D design and SPICE simulation. First, the metal gate is simulated by using a 3-D simulator, which enables to design realistic 3-D device structures, and its movement is studied for different design parameters. It is demonstrated that a low stiffness design of the structure is essential for a low-voltage actuation. Results are compared with theoretical numerical simulation and a tunable capacitor model is then embedded in a SPICE simulator and coupled either with a transistor model for MOS-NEMS or with a newly developed SET analytical model for SET-NEMS. It is shown that the use of NEMS membrane can add new functionalities to conventional MOSFET and SET, such as very abrupt switching of the current, which can break theoretical limits of MOSFET, or modulation of Coulomb oscillations governing SET characteristics

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Nanotechnology, IEEE Transactions on  (Volume:6 ,  Issue: 2 )