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Impact of Structure Relaxation on the Ultimate Performance of a Small Diameter, n-Type 〈110 〉 Si-Nanowire MOSFET

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6 Author(s)
Liang, Gengchiau ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN ; Kienle, D. ; Patil, S.K.R. ; Wang, Jing
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We investigate the impact of structure relaxation on the upper performance of a silicon nanowire metal-oxide-semiconductor field-effect-transistor (MOSFET) with small diameter employing a semiclassical transport model to calculate its ballistic I-V characteristics. For wires along the lang110rang axis and 1 nm diameter, structure relaxation induces large changes in the bond length of silicon atoms at the surface (~33%). Despite these bond length variations, the effect of reconstruction on the ballistic ON-current of Si-NW MOSFETs turns out negligible in the case considered, which can be attributed to an only slight variation of the electron effective mass after reconstruction

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Nanotechnology, IEEE Transactions on  (Volume:6 ,  Issue: 2 )