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Automated Large-Signal Load-Pull Characterization of Adjacent-Channel Power Ratio for Digital Wireless Communication Systems

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4 Author(s)
Sevic, J.F. ; Motorola SPS, Phoenix, AZ ; Baeten, R. ; Simpson, Gary ; Steer, M.B.

Large-signal adjacent-channel power ratio load-pull contours of a GaAs MESFET and a GaAs HEMT excited by ¿4-DQPSK modulation are demonstrated for the first time using an automated load-pull system. It is shown that in general there is only a weak relationship between two-tone third-order intermodulation and adjacent-channel power ratio for the (Japanese) Personal Digital Cellular standard. The relationship is both load impedance and device technology dependent insofar as two-tone linearity characterization cannot generally be used to optimize adjacent-channel power. The load-pull system presented here is modulation and device technology independent.

Published in:

ARFTG Conference Digest-Fall, 46th  (Volume:28 )

Date of Conference:

Nov. 1995