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Nitride-based high power flip-chip near-UV leds with reflective submount

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10 Author(s)
C. F. Shen ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan ; S. J. Chang ; T. K. Ko ; S. C. Shei
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Nitride-based high power flip-chip near-ultraviolet (UV) light emitting diodes (LEDs) with a reflective mirror are fabricated by depositing Al onto a Si submount. It is demonstrated that the Al layer coated onto a Si submount can effectively reflect downward emitting photons for flip-chip LEDs. Although the operation voltage of the proposed LEDs is slightly increased, it is found that the output power is at least 30% higher than that of conventional LEDs. It is also found that flip-chip near-UV LEDs are more reliable than conventional non-flip-chip LEDs

Published in:

IET Optoelectronics  (Volume:1 ,  Issue: 1 )