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High Quality Passive Devices Fabricated Inexpensively in Advanced RF-CMOS Technologies with Copper BEOL

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13 Author(s)
He, Z.X. ; IBM Corp., Essex Junction, VT ; Erturk, M. ; Ding, H. ; Moon, M.
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High quality factor inductors and highly matched low capacitance density horizontal parallel plate metal-insulator-metal capacitors were fabricated in 130nm RF-CMOS technology with minimal or zero processing step addition. The high quality factor inductors were made using a novel triple damascene integration technique. Peak quality factor of 26 was demonstrated for a 0.3nH inductor. The low capacitance density MIM capacitors were fabricated using standard BEOL copper planes with zero addition of processing steps. Capacitance density value of 0.66 fF/mum 2 was achieved for a six level copper wiring BEOL. Impact of copper plane was characterized to ensure optimal manufacturing production

Published in:

Silicon Monolithic Integrated Circuits in RF Systems, 2007 Topical Meeting on

Date of Conference:

10-12 Jan. 2007