Close category search window
 

Full-Circuit Design Optimization of a RF Silicon Integrated Passive Device

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Kai Liu ; STATS ChipPAC, Tempe, AZ ; Frye, R.C.

A schematic-electromagnetic (EM) hybrid optimization scheme was used to design an integrated passive device (IPD)-diplexer. The method uses component values derived from circuit simulation and optimization to determine physical design changes. The diplexer was fabricated in a silicon wafer process. The small form-factor (2.6 times 1.3 times 0.25 mm3) of this device makes it very attractive for system in package (SiP) applications. Simulated and measured results show good agreement

Published in:
Electrical Performance of Electronic Packaging, 2006 IEEE

Date of Conference: Oct. 2006

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.