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A 1.5-V CMOS Receiver Front-End for 9-Band MB-OFDM UWB System

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3 Author(s)
Lou, S. ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon ; Hui Zheng ; Luong, H.C.

This paper presents the design of a CMOS receiver front-end (RFE) with dual-conversion zero-IF architecture for multi-band OFDM (MB-OFDM) system covering the first 9 frequency bands from 3.1 GHz to 8.0 GHz, each with a bandwidth of 528 MHz. A 3-stage wideband variable-gain LNA and a novel mixer with bottom LO input devices are proposed. A fully integrated frequency synthesizer is included to generate the desired LO signals with a band switching time of less than Ins. Fabricated in TSMC 0.18mum CMOS process and operated at 1.5 V, the RFE measures a maximum noise figure of 8.1 dB and an in-band IIP3 of -11.1 dBm while consuming a total current of 81.5 mA

Published in:

Custom Integrated Circuits Conference, 2006. CICC '06. IEEE

Date of Conference:

10-13 Sept. 2006