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Compact Analytical Threshold-Voltage Model of Nanoscale Fully Depleted Strained-Si on Silicon–Germanium-on-Insu lator (SGOI) MOSFETs

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3 Author(s)
Venkataraman, V. ; Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi ; Nawal, S. ; Kumar, M.J.

In this paper, a physically based analytical threshold-voltage model is developed for nanoscale strained-Si on silicon-germanium-on-insulator MOSFETs for the first time, taking into account short-channel effects. The model is derived by solving the 2-D Poisson equation in strained-Si and SiGe layers. The effects of various important device parameters like strain (Ge mole fraction in the SiGe layer), body doping, gate workfunction, strained-Si thin film and SiGe layer thickness, etc., has been considered. We have demonstrated that increasing strain in order to enhance device performance can lead to undesirable threshold-voltage rolloff. The model is found to agree well with the 2-D simulation results

Published in:

Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 3 )