By Topic

Low-Temperature Polycrystalline Silicon Thin-Film Flash Memory With Hafnium Silicate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Yu-Hsien Lin ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu ; Chien, Chao-Hsin ; Tung-Huan Chou ; Tien-Sheng Chao
more authors

In this paper, we have successfully fabricated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type poly-Si-thin-film transistor (TFT) memories employing hafnium silicate as the trapping layer with low-thermal budget processing (les600degC). It was demonstrated that the fabricated memories exhibited good performance in terms of relatively large memory window, high program/erase speed (1 ms/10 ms), long retention time (>106 s for 20% charge loss), and 2-bit operation. Interestingly, we found that these memories depicted very unique disturbance behaviors, which are obviously distinct from those observed in the conventional SONOS-type Flash memories. We thought these specific characteristics are closely related to the presence of the inherent defects along the grain boundaries. Therefore, the elimination of the traps along the grain boundaries in the channel is an important factor for achieving high performance of the SONOS-type poly-Si-TFT Flash memory

Published in:

Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 3 )